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Deep Radiative Transitions in InP

Published online by Cambridge University Press:  15 February 2011

H. Temkin  and
B. V. Dutt
H. Temkin
Affiliation:
Bell Laboratories, Murray Hill, N. J. 07974
B. V. Dutt
Affiliation:
Bell Laboratories, Murray Hill, N. J. 07974
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Abstract

Results of a detailed photoluminescence study of deep radiative transitions in InP crystals prepared by bulk and epitaxial techniques with a variety of dopants are reported. In order. to understand the origin of the photoluminescence spectra, bulk samples were subjected to isothermal anneals at different partial pressures of phosphorus. Similarly, the LPE wafers were grown with and without phosphorus in the gas stream. The electrical nature of some of the species responsible for the PL emission was inferred by a study of Cddiffused bulk samples.

Based on these experiments the following tentative assignments are proposed. The photoluminescence band at 0.99 eV, common to all samples, is due to emission from a donor-like level related to the P-vacancy-impurity complex. Bands at 1.21 eV and 1.15 eV appear to be due to emission to native acceptor levels associated with the In-vacancy. The 1.08 eV band is attributed to emission to a level involving the complex of the donor (0.99 eV) and acceptor (1.21 eV) species. The relationship between these bands and residual impurities is discussed. A comparison with the work of other investigators tends to support these assignments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 253
Copyright
Copyright © Materials Research Society 1982

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References

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