Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:17:52.031Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

Published online by Cambridge University Press:  25 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
Get access

Abstract

The use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 75
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kittel, C., Elementary Statistical Physics (Wiley, New York, 1958), p. 170.Google Scholar
2. Blakemore, J., Semiconductor Statistics (Pergamon, New York, 1962), chap. 4.Google Scholar
3. Stoneham, A. M., Theory of Defects in Solids (Oxford University Press, New York, 1975).Google Scholar
4. Sze, S. M., Physics of Semiconductor Devices, 2nd Edition (Wiley, New York, 1981), chap. 1.Google Scholar
5. Cohen, J. D. and Lang, D. V., Phys. Rev. B 25, 5321 (1982).Google Scholar
6. Johnson, N. M., Bartelink, D. J., Gold, R. B., and Gibbons, J. F., J. Appl. Phys. 50, 4828 (1979).Google Scholar
7. Johnson, N. M., J. Vac. Sci. Technol. 21, 303 (1982).Google Scholar
8. Johnson, N. M., Appl. Phys. Lett. 42, 981 (1983).Google Scholar
9. Zylbersztein, A., Appl. Phys. Lett. 33, 200 (1978).CrossRefGoogle Scholar
10. Pons, D., J. Appl. Phys. 55, 3644 (1984).Google Scholar
11. Meijer, E., Grimmeiss, H. G., and Ledebo, L-A., J. Appl. Phys. 55, 4266 (1984).CrossRefGoogle Scholar
12. Johnson, N. M. and Jackson, W. B., J. Non-Crvst. Solids 68, 147 (1984).Google Scholar
13. Lax, M., Phys. Rev. 119, 1502 (1960).Google Scholar
14. Abakumov, V. N., Perel', V. I., and Yassievich, I. N., Sov. Phys. Semicond. 12, 1 (1978).Google Scholar
15. Sheinkman, M. K., Sov. Phys. - Solid State 7, 18 (1965).Google Scholar
16. Jaros, M., Solid State Commun. 25, 1071 (1978).Google Scholar
17. Kleverman, M., Grimmeiss, H. G., Litwin, A., and Janzen, E., Phys. Rev. B 31, 3659 (1985).Google Scholar
18. Dexter, D. L., in Solid State Physics (Academic Press, New York, 1958), eds Seitz, F. and Turnbull, D., Vol. 6, pp. 353–411.Google Scholar
19. Markham, J. J., Rev. Mod. Phys. 31, 956 (1959).Google Scholar
20. Hayes, W. and Stoneham, A. M., Defects and Defect Processes in Nonmetallic Solids (Wiley, New York, 1985), chap. 2.Google Scholar
21. Henry, C. H. and Lang, D. V., Phys. Rev. B 15, 989 (1977).Google Scholar
22. Huang, K. and Rhys, A., Proc. Roy. Soc. (London) A 204, 406 (1951).Google Scholar
23. Ridley, B. K., J. Phys. C 11, 2323 (1978).Google Scholar
24. Williams, R., J. Appl. Phys. 37, 3411 (1966).Google Scholar
25. Gatos, H. C. and Lagowski, J., Mat. Res. Soc. Symp. Proc. 46, 153 (1985).Google Scholar
26. Lang, D. V., J. Appl. Phys. 45, 3014 (1974).Google Scholar
27. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
28. Vechten, J. A. Van and Thurmond, C. D., Phys. Rev B 14, 3539 (1976).Google Scholar
29. Engstrom, O. and Alm, A., Solid-State Electron. 21, 1571 (1978).Google Scholar
30. Almbladh, C-O. and Rees, G. J., J. Phys. C 14, 4575 (1981).Google Scholar
31. Henry, C. H., Kukimoto, H., Miller, G. L., and Merritt, F. R., Phys. Rev. B 7, 2499 (1973).CrossRefGoogle Scholar
32. Frenkel, J., Phys. Rev. 54, 647 (1938).Google Scholar
33. Hartke, J. L., J. Appl. Phys. 39, 4871 (1968).Google Scholar
34. Yeargan, J. R. and Taylor, H. L., J. Appl. Phys. 39, 5600 (1968).Google Scholar
35. Kimerling, L. C. and Benton, J. L., Appl. Phys. Lett. 39, 410 (1981).Google Scholar
36. Chantre, A., Kechouane, M., and Bois, D., Mat. Res. Soc. Symp. Proc. 14, 547 (1983).Google Scholar
37. Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Chang, S. T., Poindexter, E. H., and Caplan, P. J., Appl. Phys. Lett. 43, 563 (1983).Google Scholar
38. Johnson, N. M., Appl. Phys. Left. 34, 802 (1979).Google Scholar
39. Poindexter, E. H., Gerardi, G. J., Ruechel, M. - E., Caplan, P. J., Johnson, N. M., and Biegelsen, D. K., J. Appl. Phys. 56, 2844 (1984).Google Scholar
40. Wiley, J. D. and Miller, G. L., IEEE Trans. Electron Devices ED–22, 265 (1975).Google Scholar
41. Collet, M. G., Solid -State Electron. 18, 1077 (1975).CrossRefGoogle Scholar
42. Golio, J. M., Trew, R. J., Maracas, G. N., and Lefevre, H., Solid State Electron. 27, 367 (1984).Google Scholar
43. Chen, J. - W., Ko, R. J., Brzesinsli, D. W., Forbes, L., and Dell'Oca, C. J., IEEE Trans. Electron Devices ED–28, 299 (1981).Google Scholar
44. Johnson, N. M., Mat. Res. Soc. Symp. Proc. 53, in press.Google Scholar
45. Vu, D. P., Chantre, A., Ronzani, D., and Pfister, J. C., Mat. Res. Soc. Symp. Proc. 53, in press.Google Scholar
46. Hawkins, I. D. and Peaker, A. R., Appl. Phys. Left. 48, 227 (1986).Google Scholar
47. Grimmeiss, H. G., Ann. Rev. Mater. Sci. 7, 341 (1977).Google Scholar
48. Chantre, A., Vincent, G., and Bois, D., Phys. Rev. B 23, 5335 (1981).Google Scholar
49. Johnson, N. M. and Biegelsen, D. K., Phys. Rev. B 31, 4066 (1985).CrossRefGoogle Scholar
50. Johnson, N. M. and Jackson, W. B., J. Non - Cryst. Solids 77/78, 335 (1985).CrossRefGoogle Scholar
51. Braun, S., Grimmeiss, H. G., and Spann, K., J. Appl. Phys. 48, 3883 (1977).Google Scholar
52. Mayo, S., Lowey, J. R., and Bell, M. I., Mat. Res. Soc. Symp. Proc. 46, 297 (1986).Google Scholar
53. Woodbury, H. H. and Ludwig, G. W., Phys. Rev. 117, 102 (1960).Google Scholar
54. Woodbury, H. H. and Ludwig, G. W., Phys. Rev. 126, 466 (1962).Google Scholar
55. Ridley, B. K. and Amato, M. A., J. Phys. C 14, 1255 (1981).Google Scholar
56. Weber, E. R., this proceedings.Google Scholar
57. Cohen, J. D., Harbison, J. P., and Wecht, K. W., Phys. Rev. Lett. 48, 109 (1982).Google Scholar
58. Lamp, C. D., Farmer, J. W., and Meese, J. M., Rev. Sci. Instrum. 55, 210 (1984).Google Scholar
59. Meese, J. M., Farmer, J. W., and Lamp, C. D., Phys. Rev. Lett. 51, 1286 (1983).Google Scholar
60. Watkins, G. D. and Corbett, J. W., Phys. Rev. 121, 1001 (1961).Google Scholar
61. Corbett, J. W., Watkins, G. D., Chrenko, R. M., and McDonald, R. S., Phys. Rev. 121, 1015 (1961).Google Scholar
62. Kaplyananski, A. A., Opt. Spectrosc. (USSR) 16, 329 (1964).Google Scholar
63. Henry, P. M., Farmer, J. W., and Meese, J. M., Appl. Phys. Left. 45, 454 (1984).Google Scholar
64. Benton, J. L., Lee, K. M., Freeland, P. E., and Kimerling, L. C., J. Electronic Mater. 14a, 647 (1985).Google Scholar