Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T01:31:24.920Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing

Published online by Cambridge University Press:  21 February 2011

J. L. Shaw ,
L. J. Brillson ,
S. Sivananthan  and
J. P. Faurie
J. L. Shaw
Affiliation:
Naval Research Laboratory, Washington D. C. 20375
L. J. Brillson
Affiliation:
Xerox Webster Research Laboratory, Webster, NY 14580
S. Sivananthan
Affiliation:
Microphysics Laboratory, Physics dept., University of Illinois at Chicago, Chicago, IL 60680
J. P. Faurie
Affiliation:
Microphysics Laboratory, Physics dept., University of Illinois at Chicago, Chicago, IL 60680
Get access

Abstract

We used photoluminescence spectroscopy to monitor CdTe in-situ during surface processing in order to optimize the surface electronic quality. Spectra of optimally-prepared (100) films grown by molecular beam epitaxy reveal low intensity emission from deep states relative to typical bulk-grown material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 59
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zanio, K. R., in Semiconductors and Semimetals, edited by Willarson, R. K. and Beer, C. (Academic, New York, 1978), Vol. 13.Google Scholar
2. Dharmadasa, I. M., Thornton, J. M., and Williams, R. H., Appl. Phys Lett. 54, 137 (1989); Z. Sobiesierski, I. M. Dharmadasa, and R. H. Williams, Appl. Phys. Lett. 53, 2623 (1988); I. M. Dharmadasa, W. G. Herrindon-Harker, and R. H. Williams, Appl. Phys Lett. 48, 1802 (1986).Google Scholar
3. Shaw, J. L., Viturro, R. E., Brillson, L. J., Kilday, D., Kelly, M. K., and Margaritondo, G., J. Vac. Sci. Technol. A6, 2752 (1988); J. L. Shaw, R. E. Viturro, L. J. Brillson, D. Kilday, and G. Margaritondo, J. Electron. Mater. 17 149 (1988).Google Scholar
4. Shaw, J. L., Viturro, R. E., Brillson, L. J., and LaGraffe, D., Appl. Phys. Lett. 53, 1723 (1988).Google Scholar
5. Faurie, J. P., Million, A., and Jacquier, G., Thin Solid Films 90, 107 (1982); J. P. Faurie, C. Hsu, J. Reno, S. Sivananthan, and M. Boukerche, Third Int. Conf. Solid Films and Surfaces (Sydney, 1984) (unpublished); J. P. Faurie, DARPA Contract MDA 903-83-K-0251 (1983-86), Final Report (unpublished).Google Scholar