Hostname: page-component-669899f699-7tmb6 Total loading time: 0 Render date: 2025-04-26T05:12:03.917Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Luminescence in InP: Phonon Feature Analysis

Published online by Cambridge University Press:  25 February 2011

S. Banerjee ,
A.K. Srivastava  and
B.M. Arora
S. Banerjee
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
A.K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
B.M. Arora
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
Get access

Abstract

The phonon features in the deep level luminescence (PL) bands related to Fe and Mn and native defects in InP have been clearly identified and the lineshape of the bands are analysed using configuration coordinate model. A consistent set of phonon parameters are determined for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 185
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Yu, P.W., Solid State Commun. 34, 183 (1980)Google Scholar
2 Eaves, L., Smith, A.W., Skolnik, M.S. and Cockayne, B., J.Appl.Phys. 53, 4955 (1982)Google Scholar
3 Skolnick, M.S., Foulkes, E.J. and Tuck, B., J.Appl.Phys. 55, 2951 (1984)Google Scholar
4 Plot-Chan, B., Deveaud, B., Rupert, A., and Lambert, B., J.Phys. Solid State Phys. C18, 5651 (1985)Google Scholar
5 Temkin, H. and Dutt, B.V., Mat.Res.Soc.Proc. 14, 253 (1983)Google Scholar
6 Temkin, H. and Bonner, W.A., J.Appl.Phys. 52, 397 (1981)Google Scholar
7 Monemar, B. and Samuelson, L., J.Luminescence 12/13, 507(1976) and Phys. Rev. B12, 809 (1978).Google Scholar
8 Bishop, S.C., “Deep Centers in Semiconductors: A state-of-the-art approach” (edited by Pantelides, Sokrates T.) p.541 Gordon and Breach Science Publishers, New York (1986)Google Scholar