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Deep Level Formation in Undoped and Oxygen-Doped GaN

Published online by Cambridge University Press:  17 March 2011

J. M. Gregie ,
R. Y. Korotkov  and
B. W. Wessels
J. M. Gregie
Affiliation:
Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
R. Y. Korotkov
Affiliation:
Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
B. W. Wessels
Affiliation:
Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

Deep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV were observed in both nominally undoped and oxygen-doped samples. The total deep level defect concentrations ranged from 6 × 1015 cm-3 in undoped films to 3 × 1016 cm-3 in oxygen-doped films. The concentration of the 3.25 eV level defect increased upon oxygen doping, while the concentrationof the 1.0 and 1.4 eV levels were essentially dopant independent. From the measured concentrations the formation energies of the defects were calculated and compared to energies calculated using density functional theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.56
Copyright
Copyright © Materials Research Society 2001

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References

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