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Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique

Published online by Cambridge University Press:  22 February 2011

A. Buczkowski ,
G. A. Rozgonyi  and
F. Shimura
A. Buczkowski
Affiliation:
North Carolina State University, Dept. of Materials Science & Eng., Box 7916, Raleigh, North Carolina 27695
G. A. Rozgonyi
Affiliation:
North Carolina State University, Dept. of Materials Science & Eng., Box 7916, Raleigh, North Carolina 27695
F. Shimura
Affiliation:
North Carolina State University, Dept. of Materials Science & Eng., Box 7916, Raleigh, North Carolina 27695
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Abstract

A noncontact technique for deep level energy analysis has been discussed based on a laser excitation/microwave reflection transient photoconductance procedure. An algorithm for separation of surface and bulk recombination effects was developed to independently determinesurface and bulk energy states. Deep energy levels associated with trapping and recombination processes have been calculated from the temperature dependence of surface recombination velocity and bulk recombination lifetime, based on state occupation statistics. Results have been compared with conventional DLTS data for silicon samples intentionally doped with metals during crystal growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 235
Copyright
Copyright © Materials Research Society 1992

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References

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