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Deep Level Defects, Luminescence, and the Electro-Optic Properties of SiGe/Si Heterostructures

Published online by Cambridge University Press:  22 February 2011

Pallab Bhattaci-Iarya ,
Shin-Hwa Li ,
Jinju Lee  and
Steve Smith
Pallab Bhattaci-Iarya
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109–2122
Shin-Hwa Li
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109–2122
Jinju Lee
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109–2122
Steve Smith
Affiliation:
University of Dayton Research Institute, Dayton, OH 45469–0178
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Abstract

Deep levels and luminescence in SiGe/Si heterostructures and quantum wells have been investigated. We have studied the effects of Be- and B-doping on the luminescent properties of Si1−xGex/Si single and multiquantum wells. No new levels, or enhancement of luminescence, from that in undoped samples, is detected in samples which are selectively doped in the well-regions, implying that the observed luminescence in the undoped quantum wells is a result of alloy disordering. Slight enhancement of luminescence is observed in disordered wells and in quantum wires made by electron beam lithography and dry etching. Deep levels have been identified and characterized in undoped Si1-xGex alloys. Hole traps in the p-type layers have activation energies ranging from 0.029-0.45 eV and capture cross sections (σ∞) ranging from 10−9 to 10−20 cm2. Possible origins of these centers are discussed. Some possibilities of obtaining enhanced electro-optic coefficients in SiGe/Si heterostructures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 147
Copyright
Copyright © Materials Research Society 1994

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