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Deep Level Characterization and Passivation in Heteroepitaxial Inp

Published online by Cambridge University Press:  22 February 2011

B. Chatterjee ,
S. A. Ringel ,
R. Sieg ,
I. Weinberg  and
R. Hoffman
B. Chatterjee
Affiliation:
Department of Electrical Engineering, Ohio State University, Columbus, OH 43202, USA
S. A. Ringel
Affiliation:
Department of Electrical Engineering, Ohio State University, Columbus, OH 43202, USA
R. Sieg
Affiliation:
Department of Electrical Engineering, Ohio State University, Columbus, OH 43202, USA
I. Weinberg
Affiliation:
NASA Lewis Research Center, Cleveland, Ohio 44135, USA
R. Hoffman
Affiliation:
NASA Lewis Research Center, Cleveland, Ohio 44135, USA
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Abstract

Deep levels in MOCVD grown p-InP on GaAs substrates have been investigated by Deep Level Transient Spectroscopy (DLTS). The effect of hydrogenation on the electrical activity of these levels has been studied through a combination of DLTS and Photoluminescence (PL) measurements. DLTS measurements indicate a drop of trap density from σ 5 × 1014 cm−3 to σ 1 × 1012 cm−3 after hydrogenation. Annealing at 400°C reactivated only the dopants, while temperatures above 600°C were necessary for deep-level reactivation. This combined with a logarithmic dependence on fill pulse time, indicate that at least one broad DLTS peak is associated with dislocations. The PL the DLTS results show that the dislocation related traps are passivated by hydrogen, preferentially over the dopants and that a wide annealing window exists for dopant reactivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 125
Copyright
Copyright © Materials Research Society 1994

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