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Deep Defect Relaxation in Hydrogenated Amorphous Silicon: New Experimental Evidence and Implications

Published online by Cambridge University Press:  10 February 2011

J. David Cohen ,
Fan Zhong ,
Daewon Kwon  and
C.-C. Chen
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
Fan Zhong
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
Daewon Kwon
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
C.-C. Chen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A.
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Abstract

We review modulated photocurrent experiments which indicate that thermal emission rate for Do defects in intrinsic samples varies in response to changes in the Fermi-level or quasi-Fermi position. This apparent shift in energy threshold is confirmed using time resolved sub-band-gap spectroscopy. We also demonstrate that such a variation of emission rate with changes in the Fermi-level position, if present within the depletion region near a barrier junction, is consistent with the details of the temperature dependence of the junction capacitance in intrinsic samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 781
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Cohen, J.D., Leen, T.M., and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1992).Google Scholar
2 Carlen, M.W., Xu, Y., and Crandall, R.S., Phys. Rev. B 51, 2173 (1995).Google Scholar
3 Cohen, J. D. and Zhong, F., J. Non-Cryst. Solids 190, 123 (1995).Google Scholar
4 Cohen, J.D. and Zhong, Fan, J. Non-Cryst. Solids 198–200, 512 (1996).Google Scholar
5 Cohen, J.D. and Kwon, D., J. Non-Cryst. Solids, in press.Google Scholar
6 Kwon, D. and Cohen, J.D., Mat. Res. Soc. Symp. Proc. 467, 197 (1997).Google Scholar
7 Michelson, C.E., Gelatos, A.V., and Cohen, J.D., Appl. Phys. Lett. 47, 412 (1987).Google Scholar
8 Oheda, H., J. Appl. Phys. 52, 6693 (1981).Google Scholar
9 Brüggemann, R., Main, C., Berkin, J., and Reynolds, S., Philos. Mag. B 62, 29 (1990).Google Scholar
10 Gelatos, A.V., Cohen, J.D., and Harbison, J.P., Appl. Phys. Letters 49, 722 (1986).Google Scholar
11 Gelatos, A.V., Mahavadi, K.K., Cohen, J.D., and Harbison, J.P., Appl. Phys. Lett. 53, 403 (1988).Google Scholar
12 Cohen, J.D. and Lang, D.V., Phys. Rev. B 25, 5321 (1982).Google Scholar
13 Abram, R.A. and Doherty, P.J., Philos. Mag.B 45, 167 (1982).Google Scholar
14 Schiff, E.A., Branz, H.M., Han, D., Melcher, D.C., and Silver, M., J. Non-Cryst. Solids 164–166, 331 (1993).Google Scholar