Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:38:42.822Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films

Published online by Cambridge University Press:  03 September 2012

Alexander Y. Polyakov ,
Nikolai B. Smirnov ,
Anatoliy V. Govorkov ,
Alexander S. Usikov ,
Natalie M. Shmidt ,
Boris V. Pushnyi ,
Denis V. Tsvetkov ,
Sergey I. Stepanov ,
Vladimir A. Dmitriev  and
Mikhail G. Mil'vidskii
...Show all authors
Alexander Y. Polyakov
Affiliation:
Institute of Rare Metals, Moscow, Russia, [email protected]
Nikolai B. Smirnov
Affiliation:
Institute of Rare Metals, Moscow, Russia
Anatoliy V. Govorkov
Affiliation:
Institute of Rare Metals, Moscow, Russia
Alexander S. Usikov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Natalie M. Shmidt
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Boris V. Pushnyi
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Denis V. Tsvetkov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Sergey I. Stepanov
Affiliation:
A.F. Ioffe Physiko-Technical Institute RAS, St.-Petersburg, Russia
Vladimir A. Dmitriev
Affiliation:
TDI., Inc., Gaithersburg, MD 20877, USA
Mikhail G. Mil'vidskii
Affiliation:
Institute of Rare Metals, Moscow, Russia
Vladimir F. Pavlov
Affiliation:
Institute of Rare Metals, Moscow, Russia
Get access

Abstract

Deep levels studies on a set of n-GaN films grown by MOCVD and HVPE reveal the presence of electron traps with levels near Ec-0.25 eV, Ec-0.55 eV, Ec-0.8 eV, Ec-1 eV, hole traps with levels near Ev+0.9 eV and a band of relatively shallow states in the lower half of the bandgap. The total density of these latter states was estimated to be some 1016 cm−3 and they were tentatively associated with dislocations in GaN based on their high concentration and band-like character. None of the electron or hole traps could be unambiguously related with strong changes of diffusion lengths of minority carriers in various samples. It is proposed that such changes occur due to different surface recombination velocities. An important role of Ec-0.55 eV traps in persistent photoconductivity phenomena in n-GaN has been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.81
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Polyakov, A.Y., in GaN and Related Materials, ed. Pearton, S.J. (Gordon&Breach Science Publishers, Singapore, 1999) pp. 173–233 Google Scholar
2. Monemar, B., in the Proceedings of the 2nd Int. Conf. on Nitride Semiconductors (ICNS'97), Tokushima, Japan, 1997, pp. 6–8 Google Scholar
3. Lundin, W.V., Pushnyi, B.V., Usikov, A.S., Gaevski, M.E., Baidakova, M.V. and Sakharov, A.V., Inst. Phys. Conf. Ser. 155, 319 (1997)Google Scholar
4. Melnik, Yu. V., Nikitina, I.P., Zubrilov, A.S., Sitnikova, A.A. and Dmitriev, V.A., Inst. Phys. Conf. Ser. 142, 863 (1996)Google Scholar
5. Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Greve, D.W., Skowronski, M., Shin, M. and Redwing, J.M., MRS Internet J. Nitride Semicond. Res. (MIJ-NSR), 3, article 37 (1998)Google Scholar
6. Polyakov, A.Y., Smirnov, N.B., Usikov, A.S., Govorkov, A.V. and Pushnyi, B.V., Solid-St. Electron., 42, 1959 (1998)Google Scholar
7. Berman, L.S. and Lebedev, A.A., Capacitance Spectroscopy of Deep Centers in Semiconductors (Nauka, Leningrad, 1981) chapter 1, p. 29 (in Russian)Google Scholar