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Decomposition of Alkylsilanes on Silicon Surfaces Using Transmission Ftir Spectroscopy

Published online by Cambridge University Press:  16 February 2011

A. C. Dillon ,
M. B. Robinson ,
M. Y. Han  and
S. M. George
A. C. Dillon
Affiliation:
Department of Chemistry, Stanford University Stanford, California 94305
M. B. Robinson
Affiliation:
Department of Chemistry, Stanford University Stanford, California 94305
M. Y. Han
Affiliation:
Department of Chemistry, Stanford University Stanford, California 94305
S. M. George
Affiliation:
Department of Chemistry, Stanford University Stanford, California 94305
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Abstract

Fourier transform infrared (FTIR) transmission spectroscopy was used to monitor the decomposition of alkylsilanes such as diethylsilane (DES) [(CH3 CH2)2SiH2], di-t-butylsilane (DTBS) [((CH3)3C)2SiH2] and ethylsilane (ES) [CH3CH2SiH3 on high-surface-area porous silicon samples. The FTIR spectra revealed that tKe akylsilanes dissociatively adsorb on porous silicon at 300 K to form SiH and Si-alkyl species. As the silicon surface was progressively annealed, the Si-alkyl species decomposed and produced gas phase ethylene (DES,ES) or isobutylene (DTBS). The decomposition of the alkyl group was accompanied by the growth of additional SiH surface species. These reaction products were consistent with a [β-hydride elimination reaction. Above 700 K, the SiH surface species decreased concurrently with the desorption of H2 from the porous silicon surface. The uptake of surface species was also monitored at various adsorption temperatures to determine the optimal exposure temperatures for carbon-free silicon deposition. Carbon contamination was not detected at adsorption temperatures below 640 K prior to H2 desorption. Because the alkylsilane adsorption process is self-limiting at temperatures below 640 K, alkylsilanes may be useful molecular precursors for the atomic layer epitaxy (ALE) of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 213
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1 Goodman, C.H.L. and Pessa, M.V., J. Appl. Phys. 60 R65 (1990).Google Scholar
2 Nishizawa, J., Aoki, K., Suzuki, S., and Kikuchi, K., J. Cryst Growth 99, 502 (1990).Google Scholar
3 Nishizawa, J., Aoki, K., Suzuki, S., and Kikuchi, K., J. Electrochem. Soc. 137, 1898 (1990).Google Scholar
4 Sze, S.M., VLSI Technology (McGraw-Hill, New York, 1988), 2nd ed., chapt. 2.Google Scholar
5 Material Safety Data Sheet for dichlorosilane (OSHA, US Dept. of Labor).Google Scholar
6 Material Safety Data Sheet for silane (OSHA, US Dept. of Labor).Google Scholar
7 Material Safety Data Sheet for disilane (OSHA, US Dept. of Labor).Google Scholar
8 Material Safety Data Sheet for diethylsilane (OSHA, US Dept. of Labor).Google Scholar
9 Material Safety Data Sheet for ethylsilane (OSHA, US Dept. of Labor).Google Scholar
13 Gupta, P., Colvin, V.L. and George, S.M., Phys. Rev. B 37, 8234 (1988).CrossRefGoogle Scholar
14 Gupta, P., Dillon, A.C., Bracker, A.S. and George, S.M., Surf. Sci. (in press).Google Scholar
15 Dillon, A.C., Gupta, P., Robinson, M.B. Bracker, A.S. and George, S.M., J. Vac. Sci Technol. A (in press).Google Scholar
20 Dillon, A.C., Robinson, M.B., Han, M.Y. and George, S.M., (Submitted to J. Electrochem. Soc.)Google Scholar
21 Dillon, A. C., Robinson, M.B., Han, M.Y. and George, S.M., (in preparation) Google Scholar
22 Dillon, A.C., Robinson, M.B., Han, M.Y. and George, S.M., (in preparation) Google Scholar
23 George, S.M., J. Vac. Sci. Technol. A 4, 2394 (1986).Google Scholar
24 Jellison, G.E., Semiconductors and Semimetals: Pulsed Laser Processing of Semiconductors; edited by Wood, R.F., White, C.W. and Young, R.T. (Academic Press, New York), Chapter 3, Vol III.Google Scholar
25 MacFarlane, G.G., McLean, T.P., Quarrington, J.E. and Roberts, V., Phys. Rev. 111, 1245 (1958)Google Scholar
26 Weakliem, H.A. and Redfield, D., J. Appl. Phys. 50, 1491 (1979).Google Scholar
27 Shulze, G. and Henzler, M., Surf. Sci. 124, 336 (1983).Google Scholar
28 Koehler, B.G., Mak, C.H., Arthur, D.A., Coon, P.A. and George, S.M., J. Chem. Phys. 89 1709 (1988).Google Scholar
29 Coon, P.A., Wise, M.L. and George, S.M. (in preparation) Google Scholar