Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T01:37:00.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Damage Removal of Low Energy Ion Implanted BF2 Layers in Silicon

Published online by Cambridge University Press:  21 February 2011

E. Myers  and
J. J. Hren
E. Myers
Affiliation:
Department of Material Science and Engineering S-N Hong and G.A. Ruggles, Department of Electrical and Computer Engineering North Carolina State University, Raleigh NC 27695
J. J. Hren
Affiliation:
Department of Material Science and Engineering S-N Hong and G.A. Ruggles, Department of Electrical and Computer Engineering North Carolina State University, Raleigh NC 27695
Get access

Abstract

Recent results indicate that thermal budgets associated with ion implantation induced end of range damage removal is affected by the presence of a free surface. Low energy BF2 implants (6 keV) were done into both single crystal and Ge preamorphized silicon substrates. Rapid thermal processing was used to study the residual end of range defect structure in the temperature range from 700 to 1000°C. 6 keV, 5E14 cm-2 BF2 implantation resulted in formation of continuous amorphous layers approximately 10 nm deep with a mean B penetration of approximately 7 nm. Conventional TEM analysis found the structures to be completely free of any spanning “hairpin” dislocations or stacking faults associated with the BF2 implant for all the annealing temperatures. For anneals between 700 °C and 900°C end of range damage formation resulted, but the size of the dislocation loops remained small. Annealing at 1000°C, 10 seconds showed no evidence of residual end of range damage. Location of the end of range damage region close to the free surface was found to decrease the thermal budget required for the removal of ion implantation induced radiation damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 27
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Baccarani, G., Wordeman, M.R. and Dennard, R.H., IEEE Trans. Electron Devices ED–31, 452(1985).Google Scholar
2) Kim, Y., Massoud, H.Z. and Fair, R.B., Appl. Phys. Lett. 53, 2197(1988).Google Scholar
3) Wilson, R.G., J. Appl. Phys. 54, 6869(1983).Google Scholar
4) Carter, C., Maszara, W.P., Sadana, D.K., Rozgonyi, G.A., Liu, J. and Wortman, J.J., Appl. Phys. Lett. 44, 459(1984).Google Scholar
5) Maher, D.M., Knoell, R.V., Ellington, M.B. and Jacobson, D.C., in Proc of Mat. Res. Soc., 52, 93(1986).Google Scholar
6) Sadana, D.K., Myers, E., Liu, J., Finsted, T. and Rozgonyi, G.A., in Proc of Mat. Res. Soc., 23, 303(1984).Google Scholar
7) Seidel., T. Knoell, R., Poli, G. and Schwartz, B., J. Appl. Phys, 58, 683(1985).Google Scholar
8) Ziegler, J.F., Biersack, J.P. and Littmark, U., eds., The Stopping and Range of Ions in Solids, Perigamon Press, New York, 1985.Google Scholar
9) Maszara, W., Sadana, D.K., Rozgonyi, G.A., Sands, T., Washburn, J. and Wortman, J.J., in Proc of Mat. Res. Soc.,35, 277(1984).Google Scholar
10) Narayan, J. and Holland, O.W., Electrochem. Soc., 131, 2651(1984).Google Scholar
11) Hong, S-N, Ruggles, G.A., Paulos, J.J. and Wortman, J.J., submitted to IEEE-ED.Google Scholar