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Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation From 40 to 150 °C

Published online by Cambridge University Press:  21 February 2011

A. Vantomme ,
J.H. Song ,
D.Y.C. Lie ,
F.H. Eisen ,
M.-A. Nicolet ,
T.K. Cams  and
K.L. Wang
A. Vantomme
Affiliation:
California Institute of Technology, Pasadena, California 91125
J.H. Song
Affiliation:
On leave from Instituut voor Kern- en Stralingsfysika, Catholic University of Leuven, Belgium, Postdoctoral Researcher, N.F.W.O. (National Fund for Scientific Research), Belgium
D.Y.C. Lie
Affiliation:
University of California, Los Angeles, CA 90024
F.H. Eisen
Affiliation:
University of California, Los Angeles, CA 90024
M.-A. Nicolet
Affiliation:
University of California, Los Angeles, CA 90024
T.K. Cams
Affiliation:
On leave from Yonsei University, Seoul 120-749, Korea
K.L. Wang
Affiliation:
On leave from Yonsei University, Seoul 120-749, Korea
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Abstract

The damage and strain produced in a nearly pseudomorphic Ge0.10Si0.90 film on Si(100) by implantation of 320 keV 28Si+ ions at 40 to 150 °C and doses from 1 to 30 x 10l4/cm2 have been measured by MeV 4He channeling spectrometry and high resolution x-ray diffractometry. Both the implantation-induced damage and strain are sensitive to the implantation temperatures. The damage as characterized by channeling decreases with the temperature of implantation for all doses and becomes minimal at 150 °C. The implantation-induced perpendicular strain does likewise, but an excess of about 6 % of its intrinsic strain remains at the strain maximum even at 150 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 121
Copyright
Copyright © Materials Research Society 1994

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References

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