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Damage Accumulation in MgAl2O4 Crystals by Xe Ion Irradiations

Published online by Cambridge University Press:  22 February 2011

N. Yu ,
M. Nastasi ,
M.G. Hollander ,
C.R. Evans ,
C.J. Maggiore ,
K.E. Sickafus  and
J.R. Tesmer
N. Yu
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
M. Nastasi
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
M.G. Hollander
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
C.R. Evans
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
C.J. Maggiore
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
K.E. Sickafus
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
J.R. Tesmer
Affiliation:
Materials Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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Abstract

We have studied the damage kinetics in single crystal MgAl2O4 (spinel) with (100) orientation under 370 keV Xe ion irradiations at temperatures of -100 and 400 C. In-situ Rutherford Backscattering Spectrometry (RBS) and ion channeling have been used to monitor the damage accumulation in spinel following sequential Xe ion irradiations. A significant temperature effect on the irradiation damage has been found. Channeling data show that at -100 C, the irradiated spinel layer reaches the same level as in a random spectrum at a dose of 8×1015 Xe/cm2 (20 DPA for peak damage), while at 400 C, the near surface region (50 nm) remains single-crystalline up to 2×1016 Xe/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 69
Copyright
Copyright © Materials Research Society 1994

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References

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