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Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes

Published online by Cambridge University Press:  31 January 2011

Lin Li ,
Zheng Yang  and
Jianlin Liu
Lin Li
Affiliation:
[email protected], University of California, Riverside, Electrical Engineering, Riverside, California, United States
Zheng Yang
Affiliation:
[email protected], University of California, Riverside, Electrical Engineering, Riverside, California, United States
Jianlin Liu
Affiliation:
[email protected], University of California, Riverside, Electrical Engineering, Riverside, California, United States
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Abstract

n-ZnO/i-CdZnO thin film was grown on p-type Si substrate by plasma-assisted molecular-beam epitaxy (MBE). Rectifying I-V curves show typical diode characteristics. Cyan electroluminescence emissions at around 473 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Room temperature photoluminescence verifies the electroluminescence emissions come from CdZnO layer.

Keywords

molecular beam epitaxy (MBE)luminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H01-09
Copyright
Copyright © Materials Research Society 2010

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