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Cw Laser-Recrystallized Polysilicon as A Device-Worthy Material

Published online by Cambridge University Press:  15 February 2011

James F. Gibbons
James F. Gibbons
Affiliation:
Stanford Electronics laboratories, Stanford, California 94305
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Abstract

The basic crystallographic and electronic properties of cw laser recrystallized thin polysilicon films are presented and shown to be suitable for fabrication of MOSFET devices. Devices and simple integrated circuits fabricated to explore the potential of this material have electrical characteristics similar to devices fabricated on single crystal material and offer significant promise for future applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 449
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Shibata, T., Lee, K. F., Gibbons, J. F., Magee, T. J., Peng, J. and Hong, J. D., (submitted for publication to Journal of Applied Physics).Google Scholar
2. Lee, K. F., Gibbons, J. F., Saraswat, Krishna C., Kamins, T. I., Appl. Phys. Letters 35, 173 (15 Jul 1979).Google Scholar
3. Tasch, A. F. Jr. Holloway, T. C., Lee, K. F. and Gibbons, J. F. Electronics Letters 15, 14, 435 (5 Jul 1979).Google Scholar
4. (a) Kamins, T. I., Lee, K. F., Gibbons, J. F. and Saraswat, Krishna C., IEEE Trans. on Elec. Dev. ED–27, 1, 290 (Jan 1980);Google Scholar
see also (b) Lam, H. W., Tasch, A. F. Jr. Holloway, T. C., Lee, K. F. and Gibbons, J. F., IEEE Electron Device Letters EDL–l, No. 1, (January 1980).Google Scholar
5. Gat, A., Gibbons, J. F., Appl. Phys. Lett. 32, 3, 142 (1 Feb 1978).Google Scholar
6. Gerzberg, L., Gat, A., Lee, K. F., Gibbons, J. F., Evans, C. A. Jr. et al. October Meeting, Electrochemical Society, Hollywood, Florida (1980).Google Scholar
7. Gibbons, J. F., Johnson, W. S. and Mylroie, S., Projected Range Statistics in Semiconductors, Dowden, Hutchinson and Ross (distributed by John Wiley & & Sons), 1975.Google Scholar
8. Kamins, T. I., Lee, K. F. and Gibbons, J. F., Solid-State Electronics 23, 1037–1039 (1980).Google Scholar
9. Cook, R. B., Frey, J., Lee, K. F. and Gibbons, J. F. (unpublished).Google Scholar
10. Norris, C. B. Jr. and Gibbons, J. F., IEEE Trans. on Electron Devices ED–14, 1, 38 (Jan 1967).Google Scholar
11. Kamins, T. I., Solid State Electronics 15, 789 (1972).Google Scholar
12. Gibbons, J. F., Lee, K. F., Magee, T. J., Peng, J. and Ormond, R., Appl. Phys. Lett. 34, 831 (1979).Google Scholar
13. Lam., H. W., Tasch, A. F. Jr. and Holloway, T. C., Electron Device Letters EDL–1, 10, 206 (Oct 1980).Google Scholar
14. Gibbons, J. F. and Lee, K. F., IEEE Electron Device Letters EDL–1, 6, (June 1980).Google Scholar
15. Kleitman, D., private communication.Google Scholar
16. Kamins, T. K. and Pianetta, P., Electron Device Letters EDL–1, 10, 214 (Oct 1980).Google Scholar
17. Gibbons, J. F., Lee, K. F. and Powell, R. A., unpublished.Google Scholar