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CVD Growth of SiC on Ultrathin SOi2: A Step Towards Development of a Compliant Substrate for SiC and III-V Compounds

Published online by Cambridge University Press:  10 February 2011

Freydoon Namavar ,
P. Colter ,
A. Cremins-Costa ,
E. Gagnon  and
D. Perry
Freydoon Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
P. Colter
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
A. Cremins-Costa
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
E. Gagnon
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01730-2396
D. Perry
Affiliation:
Purdue University, West Lafayette, IN
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Abstract

This paper addresses the initial stage of epitaxial growth of SiC on thin (about 300A) and thick (2000Å) Si films. Our results as obtained by Rutherford backscattering spectroscopy (RBS), Auger spectroscopy, and plan-view/cross-sectional TEM, demonstrate epitaxial growth of 3C-SiC structures on ultrathin Si films (even under non-optimized growth conditions). These preliminary results indicate that the crystalline quality of SiC on thin SIMOX is better than that grown on thick SIMOX or bulk Si substrates. Growth of SiC epi on thin Si will pave the way for growth of SiC directly on SiO2 (a compliant substrate) by carbonization of the entire thin Si top layer of SIMOX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 357
Copyright
Copyright © Materials Research Society 1996

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References

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