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CVD Growth and Excimer Laser Processing of SiGe Alloys Monitored by Single Wavelength Ellipsometry and Atomic Force Microscopy

Published online by Cambridge University Press:  10 February 2011

R. Larciprete ,
G. Padeletti ,
S. Cozzi  and
S. Pieretti
R. Larciprete
Affiliation:
ENEA, Dip. INN/FIS, P. 0. Box 65, 00044 Frascati (RM) Italy
G. Padeletti
Affiliation:
CNR-ICMAT, via Salaria, km. 29,5 - 00016 Monterotondo Staz. (RM), Italy
S. Cozzi
Affiliation:
ENEA guest
S. Pieretti
Affiliation:
ENEA guest
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Abstract

Single wavelength ellipsometry was used to monitor the CVD growth of Si(1-x)Gex alloys onSi and to evaluate the effect of sample irradiation by KrF laser pulses, performed during or afterthe CVD growth. The information obtained was correlated with AFM analysis results in order tooptimize the growth parameters for an improved morphological quality of the alloy layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 65
Copyright
Copyright © Materials Research Society 1998

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References

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