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Cu-doped ZnSe Film with Stoichiometric Composition Deposited at Room Temperature using Compound Sources

Published online by Cambridge University Press:  01 February 2011

Masahiro Orita ,
Takashi Narushima  and
Hiroaki Yanagita
Masahiro Orita
Affiliation:
[email protected], HOYA Corporation, R&D Center, 3-3-1 Musashino, Akishima-shi, 196-8510, Japan
Takashi Narushima
Affiliation:
[email protected], HOYA Corporation, R&D Center, Akishima-shi, 196-8510, Japan
Hiroaki Yanagita
Affiliation:
[email protected], HOYA Corporation, R&D Center, Akishima-shi, 196-8510, Japan
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Abstract

Stoichiometric Cu-doped ZnSe crystalline films were prepared on glass substrates from ZnSe and Cu2Se powders using the evaporation method without intentional heating. Post-annealing treatment at 400°C in a vacuum improved the crystallinity, and no secondary phase was observed using X-ray diffraction for a film with a Cu concentration of Cu/(Zn + Cu) = 0.10, which had a conductivity of 28 Scm-1 and good transparency at green and red wavelengths. The thermal probe test indicated p-type carrier polarity, and the effects of annealing were confirmed by irradiating the as-deposited films with a YAG laser (ë = 355 nm). Possibility of producing transparent p-type conducting films on polymer substrates is demonstrated.

Keywords

II-VIpolycrystalsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-28
Copyright
Copyright © Materials Research Society 2007

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