Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-27T17:17:20.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Cu-doped ZnSe Film with Stoichiometric Composition Deposited at Room Temperature using Compound Sources

Published online by Cambridge University Press:  01 February 2011

Masahiro Orita ,
Takashi Narushima  and
Hiroaki Yanagita
Masahiro Orita
Affiliation:
[email protected], HOYA Corporation, R&D Center, 3-3-1 Musashino, Akishima-shi, 196-8510, Japan
Takashi Narushima
Affiliation:
[email protected], HOYA Corporation, R&D Center, Akishima-shi, 196-8510, Japan
Hiroaki Yanagita
Affiliation:
[email protected], HOYA Corporation, R&D Center, Akishima-shi, 196-8510, Japan
Get access

Abstract

Stoichiometric Cu-doped ZnSe crystalline films were prepared on glass substrates from ZnSe and Cu2Se powders using the evaporation method without intentional heating. Post-annealing treatment at 400°C in a vacuum improved the crystallinity, and no secondary phase was observed using X-ray diffraction for a film with a Cu concentration of Cu/(Zn + Cu) = 0.10, which had a conductivity of 28 Scm-1 and good transparency at green and red wavelengths. The thermal probe test indicated p-type carrier polarity, and the effects of annealing were confirmed by irradiating the as-deposited films with a YAG laser (ë = 355 nm). Possibility of producing transparent p-type conducting films on polymer substrates is demonstrated.

Keywords

II-VIpolycrystalsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-28
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. O'Donnell, K.P., and Middleton, P.G., “Bandgaps of widegap II-VI semiconductors,” Wide Bandgap II-VI Semiconductors, Bhargava, ed. R., (Inspec, 1997), pp. 33–36.Google Scholar
2. Ali, Z. Aqili, A. K. S., Maqsood, A., and Akhtar, S. M. J., Vacuum 80, 302 (2005).Google Scholar
3. Ali, Z., Aqili, A. K. S., Akhtar, S. M. J., and Maqsood, A., J. Non-Cryst. Solids 352, 409 (2006).Google Scholar
4. Wosten, W. J. and Geers, M. G., J. Phys. Chem. 66, 1252 (1962).Google Scholar
5. Grade, M. and Hirschwald, W., Z. Anorg. Allg. Chem. 460, 106 (1980).Google Scholar
6.Joint Committee on Powder Diffraction Standards card data, 29–575.Google Scholar