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Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

Published online by Cambridge University Press:  15 February 2011

Yuichi Hiroyama  and
Masao Tamura
Yuichi Hiroyama
Affiliation:
Joint Research Center for Atom Technology-Angstrom Technology Partnership, 1-1-4 Higashi, Tsukuba. Ibaraki 305-0046, Japan
Masao Tamura
Affiliation:
Joint Research Center for Atom Technology-Angstrom Technology Partnership, 1-1-4 Higashi, Tsukuba. Ibaraki 305-0046, Japan
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Extract

We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2, gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epitaxial growth of β-GaN on thus SiC-formed Si substrates. At the highest GaN growth rate of 110 nm/h (a Ga-cell temperature of 950 °C), β-GaN layers grown at a substrate temperature of 700 °C show a nearly flat surface morphology and the fraction of included hexagonal GaN becomes negligible when compared to the results of β-GaN layers grown under other conditions of Ga-cell and substrate temperatures. Thus obtained β-GaN films have good performance in photoluminescence intensity although the FWHM of band-edge recombination peak is still wider (137 meV) than the reported values for the β-GaN on 3C-SiC and GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.9
Copyright
Copyright © Materials Research Society 1999

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