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Crystallographic Analysis of (110)CeO2/(100)Si Using RBS/Channeling Technique

Published online by Cambridge University Press:  15 February 2011

Masataka Satoh ,
Yasuhiro Yamamoto ,
Shigeyuki Nakajima ,
Yoshinobu Sakurai ,
Tomoyasu Inoue  and
Tetsu Ohsuna
Masataka Satoh
Affiliation:
Research Center of Ion Beam Technology. Hosei University, Koganei, Tokyo 184, Japan
Yasuhiro Yamamoto
Affiliation:
Research Center of Ion Beam Technology. Hosei University, Koganei, Tokyo 184, Japan
Shigeyuki Nakajima
Affiliation:
Research Center of Ion Beam Technology. Hosei University, Koganei, Tokyo 184, Japan
Yoshinobu Sakurai
Affiliation:
Research Center of Ion Beam Technology. Hosei University, Koganei, Tokyo 184, Japan
Tomoyasu Inoue
Affiliation:
College of Science and Engineering. Iwaki Meisei University, Iwaki, Fukushima 970, Japan
Tetsu Ohsuna
Affiliation:
College of Science and Engineering. Iwaki Meisei University, Iwaki, Fukushima 970, Japan
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Abstract

Epitaxially grown CeO2 layers on (100)Si substrates are studied using the RBS/channeling technique. The crystallographic correlation between the overgrown layers and off-oriented Si substrates is precisely analyzed by means of constructing stereographic projections obtained from the planar channeling dips. From the stereographic projections for the CeO2 layer on the 4° off-oriented Si substrate, it is clearly seen not only that the epitaxial (110)CeO2 layer is single crystal with the direction defined as [001]CeO2 ║ [011]Si, but also that the crystalline quality of (110)CeO2 on (100)Si can be improved by use of the off-oriented substrate. The inclined epitaxial direction is also detected as the depth information.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 309
Copyright
Copyright © Materials Research Society 1993

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