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Crystallization Process and Chemical Disorder in FlashEvaporated Amorphous Gallium Antimonide Films

Published online by Cambridge University Press:  15 February 2011

J. H. Dias Da Silva ,
I. Cisneros  and
L. P. Cardoso
J. H. Dias Da Silva
Affiliation:
UNESP, FC, Depto. De Fisica. CEP 17033–060, Bauru, SP, Brazil
I. Cisneros
Affiliation:
Universidade Estadual de Campinas, Instituto de Fisica. 13081–970. Campinas, SP, Brazil.
L. P. Cardoso
Affiliation:
Universidade Estadual de Campinas, Instituto de Fisica. 13081–970. Campinas, SP, Brazil.
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Abstract

In this work we describe a flash evaporation system specially built toproduce Amorphous films of III-V compounds and characterize GaSb films usingoptical, electrical and X-Ray diffraction Measurements. Changes in thecomposition of the GaSb samples were obtained by the use of differentcrucible temperatures. In such samples, consequently, the optical absorptionedge and the DC electrical conductivity were Modified. The departure fromstoichiometry in GaSb films is analyzed on the basis of these results whichcan be used as an evidence of the chemical disorder. This kind of disorderis represented by either wrong bonds or sites with differentcoordination.

Thermal annealing with a sequence of increasing temperatures first induceddetectable variations in the optical absorption edge and in the vibrationalproperties of the Amorphous GaSb. These variations are compatible with theGaSb local ordering and were observed by Raman scattering and infraredabsorption spectra. The annealing at higher temperatures allowed thecrystallization of the material confirmed by X-Ray diffraction. From theseexperimental results a crystallization mechanism based on the segregation ofSb excess coming from the crystallized regions toward the Amorphous tissueis proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 645
Copyright
Copyright © Materials Research Society 1994

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References

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