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Crystallization Phenomenon Induced by Proton Beam Irradiation using Large Area Ion Implantation for Polycrystalline Silicon Thin Film Transistors

Published online by Cambridge University Press:  25 February 2011

A. Yoshinouchi ,
T. Morita  and
S. Tsuchimoto
A. Yoshinouchi
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara 632, Japan
T. Morita
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara 632, Japan
S. Tsuchimoto
Affiliation:
Central Research Laboratories, SHARP Corporation, Tenri, Nara 632, Japan
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Abstract

Crystallization induced by proton beam irradiation using large area ion implantation at low temperature (less than 600°C) have been investigated. Phosphine gas containing hydrogen of more than 95% is discharged by RF power of 100W. Both phosphorus ions and protons are accelerated by a potential of 100kV and implanted into polycrystalline silicon (poly-Si) layers. At a range of beyond 2×1015 ions/cm2 P1 ions dose, amorphous phase is primarily formed and then changes into polycrystals again and its grain sizes grow up to 50nm in average diameter. The crystallization is found to occur simultaneously with phosphorus doping and to depend on the amount of the irradiated protons. This technique enables us to eliminate the activation annealing process for implanted dopant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 383
Copyright
Copyright © Materials Research Society 1992

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References

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