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Crystallization of Tin-Implanted Amorphous Silicon Thin Films

Published online by Cambridge University Press:  25 February 2011

Fuyu Lin  and
Miltiadis K. Hatalis
Fuyu Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Betldehem, PA 18015
Miltiadis K. Hatalis
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Betldehem, PA 18015
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Abstract

The crystallization of Sn-implanted amorphous silicon was studied as a function of tin implant dose and annealing conditions by transmission electron microscopy. The films were implanted at an energy of 110 keV with a dose in the range of 5 × 1014 to 5×1016 cm−2 and were annealed at a temperature in the range of 450°C to 550°C. An enhanced rate of crystallization in amorphous Si-Sn films compared to the non-implanted amorphous silicon films during thermal annealing was observed. The crystallization process of Si films implanted with tin at a dose of 2.5×1016 cm−2 or less is very similar to unimplanted silicon films except higher nucleation rates and shorter crystallization time were observed with increasing tin dose. Films implanted with tin at a dose of 2.5×1016 cm−2 or more display extremely rapid crystallization (3 hours at 450°C) and very fine grain structure (10 nm); no substantial grain growth has been observed during lurther annealing, but some single crystal-like areas were formed. In-situ annealing of silicon implanted to 5×1016 cm−2 showed that the crystallization process is enhanced by the formation of the liquid tin phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 553
Copyright
Copyright © Materials Research Society 1993

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References

1. Hseih, B., Hatalis, M. K., and Greve, D. W.. IEEE Transaction on Electron Device, 35 (1842), 1988.Google Scholar
2. Hatalis, M. K. and Greve, D. W.. J. Appl Phys., 63(2260), 1988.Google Scholar
3. Voutsas, A. T. and Hatalis, M. K.. J. Electrochem. Soc., 9(2659), 1992.Google Scholar
4. Lin, F. and Hatalis, M. K.. Mater. Res. Proc., 230(195), 1992.Google Scholar
5. Herd, S. R., Chaudhani, P., and Brodsky, M. H.. J. Non-Cryst. Sol., 7(309), 1972.Google Scholar
6. Nygren, E., Pogany, A. P., Short, K. T., and Williams, J. S.. Appl Phys. Lett., 52(439), 1988.CrossRefGoogle Scholar
7. Carlsson, J. R. A., Gong, S. F., Li, X. -H., and Hentzell, H. T. G.. J. Appl Phys., 70(4857), 1991.Google Scholar
8. Nygren, E., McCallum, J. C., Thornton, R., Williams, J. S., and Olson, G. L.. Mater. Res. Soc. Symp. Proc., 100(405), 1988.Google Scholar
9. Elliman, R. G., Thornton, R. P. and Williams, J. S.. J. Mater. Res., 5(1003): 9, May 1990.Google Scholar
10. Sherma, R. K., Bansal, S. K., Nath, R., and Mehra, R. M.. J. Appl Phys., 55(387), 1984.Google Scholar