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Crystallization of Silicon on Electro-Optic Plzt by a Laser Beam Modulated in Shape and Intensity Profile

Published online by Cambridge University Press:  28 February 2011

T. H. Lin ,
M. L. Burgener ,
S. C. Esener  and
S. H. Lee
T. H. Lin
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
M. L. Burgener
Affiliation:
Naval Ocean System CenterCode 553, San Diego, CA 921522
S. C. Esener
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
S. H. Lee
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
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Abstract

PLZT, a ferroelectric material with a high quadratic electro-optic coefficient, is combined with silicon technology via chemical vapor deposition to enable the realization of Si/PLZT spatial light modulators. Laser crystallization is required to produce device quality silicon deposited on PLZT. The critical issues in the laser crystallization are (i) achieving crystallization in the absence of a good seed, and (ii) preventing damage to the PLZT. To prevent PLZT damage during the laser heating, a 3.5 μm silicon dioxide layer is used as a thermal buffer between the silicon and the PLZT and the effective scanning time is shortened to 100 μs. A double humped cw argon ion laser with a shaped beam is used to achieve successful crystallization with good surface smoothness and large grain size. This technology and devices fabricated on these samples will be discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 135
Copyright
Copyright © Materials Research Society 1987

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References

1. Lee, S. H., Esener, S. C., Title, M. A., Drabik, T. J., Opt. Eng. Vol.25 (2), 250 (1986).Google Scholar
2. Stultz, T. J., Gibbons, J. F., Appl. Phys. Lett. 39, 498 (1982).Google Scholar
3. Aizaki, N., Appl. Phys. Lett. 44 (7), 686 (1984).Google Scholar
4. Dasgupta, S., Jackson, H. E., Boyd, J. T., Mat. Res. Soc. Symp. Proc. Vol.53, 71 (1986).Google Scholar
5. Bloembergen, N., AIP Conference Proceeding, No. 50, 1, (Am. Inst. Phys., New York, 1979).Google Scholar
6. Maby, E. W., Geis, M. W., LeCoz, Y. L., Silversmith, D. J., Mountain, R. W., Antoniadis, D. A., IEEE Electron Device Lett. Vol. EDL-2 (10), 241 (1981).Google Scholar