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Crystallization of Indium Implanted Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

E. Nygren ,
J. S. Williams ,
A. Pogany ,
R. G. Elliman ,
G. L. Olson  and
J. C. McCallum
E. Nygren
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
J. S. Williams
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
A. Pogany
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Victoria, Australia
R. G. Elliman
Affiliation:
CSIRO, Chemical Physics, Clayton 3168, Victoria, Australia
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90625 U.S.A.
J. C. McCallum
Affiliation:
Melbourne University, School of Physics, Parkville 3052, Australia
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Abstract

The annealing behavior of In+-implanted amorphous Si layers is reviewed. Particular attention is given to the amorphous to polycrystalline transformation for peak In concentrations > 0.5 atomic percent. New data concerning the transformation rate, associated In transport and microstructure are presented and phase transformation mechanisms are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 307
Copyright
Copyright © Materials Research Society 1987

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References

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