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Crystallization Of Amorphous Silicon During Thin Film Gold Reaction

Published online by Cambridge University Press:  26 February 2011

Lars G. Hultman ,
P. A. Psaras  and
H.T.G. Hentzell
Lars G. Hultman
Affiliation:
Thin Film Group, Dept. of Physics and Measurement Technology, S-58183, Linkoping, Sweden
P. A. Psaras
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, New York, 10598, USA
H.T.G. Hentzell
Affiliation:
Thin Film Group, Dept. of Physics and Measurement Technology, S-58183, Linkoping, Sweden
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Abstract

The crystallization of α-Si in α-Si(50nm) and Au(5nm) thin film bi-layers has been investigated during heat treatment in a transmission electron microscope (TEM). When crystallization of α-Si first begins at 130°C the Au-Si alloy reflections observed at lower temperatures vanish and several new reflections from metastable Au-Si compounds occur. Dendritically growing islands of poly-Si are observed after heating at 175°C. If the samples are held constant at 175°C for ten minutes, the poly-Si islands grow together. The formation of poly-Si depends on the diffusion of Au into α-Si and the formation of metastable Si-Au compounds. After crystallization Au segregates to the front and back surface of the poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 109
Copyright
Copyright © Materials Research Society 1986

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References

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