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Crystallization of Amorphous Si Thin Films Using a Viscous Ni Solution

Published online by Cambridge University Press:  14 March 2011

Jin Hyung Ahn ,
Sung Chul Kim  and
Byung Tae Ahn
Jin Hyung Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Sung Chul Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Byung Tae Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
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Abstract

We prepared a viscous Ni solution by dissolving NiCl2 in 1N HCl and mixing it with propylene glycol to control the amount of Ni on Si surface. A uniform film was formed after spin coating and oven dry. The a-Si films deposited by LPCVD with Si2H6 gas were crystallized more uniformly and more reproducibly. And the crystallization was enhanced from 600°C, 30h to 500°C, 10h. The surface roughness of poly-Si film crystallized with the viscous solution was much smaller than that of poly-Si film crystallized from Ni/Si direct contact. The TFT mobility was improved even though the crystallization temperature was much lower.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q9.1.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Lee, S. W. and Joo, S. K., IEEE Electron Device Lett., 17, 160 (1996)Google Scholar
[2] Sohn, D. K., Lee, J. N., Kang, S. W. and Ahn, B. T., Jpn. J. App. Phys., 35, 1005 (1996)Google Scholar
[3] Yoon, S. Y., Kim, K. H., Kim, C. O., Oh, J. Y. and Jang, J., J. Appl. Phys., 82, 5865 (1997)Google Scholar
[4] Kalkan, A. K. and Fonash, S. J., J. Electrochem. Soc., 144, L297 (1997)Google Scholar
[5] Sohn, D. K., Park, S. C., Kang, S. W. and Ahn, B. T., J. Electrochem. Soc., 144, 3592 (1997)Google Scholar
[6] Jin, Z., Bhat, G. A., Yeung, M., Kowk, H. S. and Wong, M., J. Appl. Phys., 84, 194 (1998)Google Scholar