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Crystallization Dynamics and Rapid Thermal Processing of PZT Thin Films

Published online by Cambridge University Press:  25 February 2011

Jiayu Chen ,
Keith G. Brooks ,
K.R. Udayakumar  and
L. Eric Cross
Jiayu Chen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Keith G. Brooks
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K.R. Udayakumar
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L. Eric Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

The crystallization process of PZT thin films has been studied in situ by means of Environmental Scanning Electron Microscopy ( ESEM ). Based on the ESEM observations, the Rapid Thermal Processing (RTP) technique has been employed to crystallize ferroelectric thin films. Various annealing temperature-time combinations were investigated; the results indicate the crystallization process to be very fast. X-ray diffraction data shows the crystallization to be complete in 10 seconds at 600°C, and in 1 second at 700°C. In comparison with conventionally furnace processed films, the RTP films have comparable ferroelectric and dielectric properties, but are distinguished by superior breakdown strengths and morphologically smoother surface. The relation between microstructure of films and crystallizing parameters has been studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 33
Copyright
Copyright © Materials Research Society 1992

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References

[1]Bondurant, D. and Gnadinger, F., IEEE Spectrum, pp. 30–33 (1989)Google Scholar
[2]Udayakumar, K.R., Bart, S.F., Flynn, A.M., Chen, J., Tavrow, L.S., Cross, L.E., Brooks, R., and Ehrlich, D.J., 4th IEEE MEMS Workshop, 109 (1991).Google Scholar
[3]Sedgwick, T.O., Seidel, T.E., Tsaur, B.Y., MRS Proc. 52 MRS, Pittsburgh (1986).Google Scholar
[4]Wilson, S.R., Powell, R.A., Davies, D.E.,MRS Proc.,92,MRS, Pittsburgh (1987)Google Scholar
[5]Sujata, K. and Jennings, H.M., MRS Bulletin, Vol 14, 41 (1991).Google Scholar
[6]Udayakumar, K.R., Chen, J., and Cross, L.E., Proceedings of the 7th Int. Symp. on Applications of Ferroelectrics, pp. 673 (1990).Google Scholar
[7]Givargizov, E.I., “Oriented Crystallization on Amorphous Substrates”,Plenum Press, New York (1991).Google Scholar
[8]Kumar, C. V. R. Vasant, Sayer, M., Pascual, R., Amnm, D. T., Wu, Z., and Swanston, D. M., Appl. Phys. Lett. 58 (11), 1161 (1991)Google Scholar
[9]Sreenivas, K. and Sayer, M., J. Appl. Phys. 64 (3), 1484 (1988)Google Scholar
[10]Krupanidhi, S. B., Hu, H. and Kumar, V., J. Appl. Phys. 71(1), 376(1992)Google Scholar