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Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation

Published online by Cambridge University Press:  26 February 2011

D. X. Cao ,
D. K. Sood  and
A. P. Pogany
D. X. Cao
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
D. K. Sood
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
A. P. Pogany
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
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Abstract

Indium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 113
Copyright
Copyright © Materials Research Society 1988

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References

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