Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:38:59.630Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallinity, Morphology, and Conductivity of Boron-Doped Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

G. Rajeswaran ,
J. Tafto ,
R. L. Sabatini  and
P. E. Vanier
G. Rajeswaran
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, New York 11973
J. Tafto
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, New York 11973
R. L. Sabatini
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, New York 11973
P. E. Vanier
Affiliation:
Division of Metallurgy and Materials Science Brookhaven National Laboratory, Upton, New York 11973
Get access

Abstract

Boron-doped microcrystalline (μc) silicon films produced by rf glow discharge from dilute (1%) mixtures of SiH4 in H2 show a critical dependence of conductivity on deposition conditions. The dark conductivity was related to the microscopic features using electron microscopy. The μc−Si:H films contain clusters of crystallites embedded in an amorphous matrix. The size of the crystalline clusters is typically 0.2 μm in diameter, and the size of the individual crystallites is about 2.5 nm. Electron micrographs of samples prepared at substrate temperatures Ts=135°C, 150°C, 165°C, and 180°C show that the number of crystalline clusters increases with Tsup to 165°C. At Ts=180°C, the crystallites completely disappear. When the concentration of SiH4 in H2 is decreased to 0.25%, the microstructure shows a high density of crystallites with no apparent clustering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 159
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hamakawa, Y., Fujimoto, K., Okuda, K., Kashima, Y., Nonomura, S., and Okamoto, H., Appl. Phys. Lett. 43 (7), 644–646 (1983).Google Scholar
2. Mishima, Y., Miyazaki, S., Hirose, M., and Osaka, Y., Phil. Mag. B 46, 1 (1982).CrossRefGoogle Scholar
3. Willeke, G., Spear, W. E., Jones, D. I., and LeComber, P. G., Phil. Mag. B 46, 177 (1982).CrossRefGoogle Scholar
4. Moss, S. C. and Graczyk, J. F., Phys. Rev. Lett. 23, 1167 (1969).CrossRefGoogle Scholar
5. Kampas, F. J., J. Appl. Phys. 53, 6408 (1982).CrossRefGoogle Scholar
6. Rajeswaran, C., Kampas, F. J., Vanier, P. E., Sabatini, R. L., and Tafto, J., Appl. Phys. Lett (in press).Google Scholar