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Crystalline Films on Amorphous Substrates by Zone Melting and Surface-Energy-Driven Grain Growth in Conjunction with Patferning

Published online by Cambridge University Press:  28 February 2011

Henry I. Smith ,
M. W. Geis ,
C. V. Thompson  and
C. K. Chen
Henry I. Smith
Affiliation:
Dept. of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
C. V. Thompson
Affiliation:
Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173
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Abstract

Two approaches to preparing oriented crystalline films on amorphous substrates are reviewed briefly: zone-melting recrystallization (ZMR) and surface-energy-driven grain growth (SEDGG). In both approaches patterning can be employed either to establish orientation or to control the location of defects. ZMR has been highly successful for the growth of Si films on oxidized Si substrates, but its applicability is limited by the high temperatures required. SEDGG has been investigated as a potentially universal, low temperature approach. It has been demonstrated in Si, Ge, and Au. Surface gratings favor the growth of grains with a specific in-plane orientation. In order for SEDGG to be of broad practical value, the mobility of semiconductor grain boundaries must be increased substantially. Mobility enhancement has been achieved via doping and ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 3
Copyright
Copyright © Materials Research Society 1986

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References

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