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Crystalline and Electrical Properties of ITO Semiconductive Films deposited by Atmospheric RF Plasma Technique

Published online by Cambridge University Press:  15 February 2011

R. W. Moss ,
S. Misture ,
D. H. Lee ,
R. A. Condrate Sr.  and
X. W. Wang
R. W. Moss
Affiliation:
Alfred University, Alfred, New York, 14802
S. Misture
Affiliation:
Alfred University, Alfred, New York, 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, New York, 14802
R. A. Condrate Sr.
Affiliation:
Alfred University, Alfred, New York, 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, New York, 14802
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Abstract

Indium tin oxide (ITO) semiconductive films were deposited by an atmospheric RF plasma technique. Indium-to-tin (In:Sn) ratios varied from 10:0 to 0:10. A small amount of antimony was doped into some ITO samples for comparative studies. Substrate materials were soda-lime-silicate (SLS) float glass and fused silica glass. Structural, electrical, and optical properties were dependent on the In:Sn ratio, precursor material feeding rate, oxygen feeding rate, and other deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 851
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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3.Lee, D.H., Moss, R.W., Vuong, K.D., Condrate, R. A. Sr, and Wang, X. W., to be published in Thin Solid Films.Google Scholar