Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:52:27.456Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystal-Axis-Rotation of Laser-Recrystallized Silicon on Insulator

Published online by Cambridge University Press:  21 February 2011

K. Sugahara ,
T. Ippóshi ,
Y. Inoue ,
T. Nishimura  and
Y. Akasaka
K. Sugahara
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
T. Ippóshi
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
Y. Inoue
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
T. Nishimura
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
Y. Akasaka
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
Get access

Abstract

The relation between the seed pitch and defect density of the laserrecrystallized SOI film was investigated. It was found that the defect density of the SOI increases as the seed pitch increases. The dependences of the laser scan speed and laser power on rotation angle of the SOI film were experimentally and numerically investigated. The crystal-axisrotation of the SOI film was considered to be due to the difference of the temperature between the top and bottom surface of the SOI film near the liquid-solid interface. A polysilicon heat sink structure with high thermal conductivity was newly proposed and was found to reduce the rotation in a small angle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 371
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Akasaka, Y., Proceeding of the IEEE 74 1703 (1988)Google Scholar
2. Sugahara, K., Kusunoki, S., Inoue, Y., Nishimura, T., and Akasaka, Y., J. Appl. Phys. 62 4178 (1987)Google Scholar
3. Nishimura, T., lnoue, Y., Sugahara, K., Kusunoki, S., Kumamoto, T., Nakagawa, S., Nakaya, M., Horiba, Y., and Akasaka, Y., Proceedings of the IEDM 87 111 (1987)Google Scholar
4. Colinge, J.P., Demoulin, E., Bensahel, D., and Auvert, G., Appl. Phys. Lett. 41 346 (1982)Google Scholar
5. Kusunoki, S., Sugahara, K., Nishimura, T., Kumamoto, T., Nakaya, M., Yazawa, N., and Horiba, Y., Proceedings 1987 Symp. VLSI Tech., Karuizawa, p107 (1987)Google Scholar
6. Shirakawa, K., Maekawa, M., Yamazaki, O., Tsuji, H. and Koba, M., Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Japan, p175 (1987)Google Scholar