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Crystal Structure of Non-Doped and Sn-Doped α-(GaFe)2O3 Thin Films.

Published online by Cambridge University Press:  15 January 2013

Kentaro Kaneko ,
Kazuaki Akaiwa  and
Shizuo Fujita
Kentaro Kaneko*
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
Kazuaki Akaiwa
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
Shizuo Fujita
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
*
*Email: [email protected]
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Abstract

Corundum structured α-(GaFe)2O3 alloy thin films were obtained on c-plane sapphire substrates by the mist chemical vapor deposition method. Wide range of X-ray diffraction 2θ/θ scanning measurements indicated that these crystals were epitaxially grown on c-plane sapphire substrates and these are no other crystal oriented phase. The cross-sectional and plane-view transmission electron microscope images showed the growth along the c-axis of α-(GaFe)2O3 thin films on sapphire substrates, forming joint of columnar structure. The non-doped α-(GaFe)2O3 thin films showed ferromagnetic properties at 300 K, though the origin of ferromagnetism still remained unresolved. In order to enhance the spin-carrier interaction, Sn doped α-(GaFe)2O3 alloy thin films were fabricated on c-plane sapphire substrates. X-ray diffraction 2θ/θ and ω scanning measurement results indicated that the highly-crystalline films were epitaxially grown on substrates in spite of the Sn-doping.

Keywords

x-ray diffraction (XRD)vapor phase epitaxy (VPE)transmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 147 - 152
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Roy, R., Hill, V. G., and Osborn, E. F.: J. Am. Chem. Soc. 74 (1952) 719.CrossRefGoogle Scholar
Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T., and Yamakoshi, S.: Appl. Phys. Lett. 100 (2012) 013504.CrossRefGoogle Scholar
Oshima, T., Okuno, T., Arai, N., Suzuki, N., Hino, H., and Fujita, S.: Jpn. J. Appl. Phys. 48 (2009) 011605 CrossRefGoogle Scholar
Kokubun, Y., Miura, K., Endo, F., and Nakagomi, S.: Appl. Phys. Lett. 90 (2007) 031912.CrossRefGoogle Scholar
Oshima, T., Okuno, T., and Fujita, S.: Jpn. J. Appl. Phys. 46 (2007) 7217.CrossRefGoogle Scholar
Oshima, T., Okuno, T., Arai, N., Suzuki, N., Ohira, S., and Fujita, S.: Appl. Phys. Express 1 (2008) 011202.CrossRefGoogle Scholar
Chen, C.-C. and Chen, C.-C.: J. Mater. Res. 19 (2004) 1105.CrossRefGoogle Scholar
Ogita, M., Higo, K., Nakanishi, Y., and Hatanaka, Y.: Appl. Surf. Sci. 175 (2001) 721.CrossRefGoogle Scholar
Hayashi, H., Huang, R., Ikeno, H., Oba, F., Yoshioka, S., Tanaka, I., and Sonoda, S..: Appl. Phys. Lett. 89 (2006) 181903.CrossRefGoogle Scholar
Huang, R., Hayashi, H., Oba, F., and Tanaka, I.: J. Appl. Phys. 101 (2007) 063526.CrossRefGoogle Scholar
Hayashi, H., Huang, R., Oba, F., Hirayama, T., and Tanaka, I.: J. Mater. Sci. 46 (2011) 4169 CrossRefGoogle Scholar
Remeika, J. P.: J. Appl. Phys. 31 (1960) 263S.CrossRefGoogle Scholar
Kida, N., Kaneko, Y., He, J. P., Matsubara, M., Sato, H., Arima, T., Akoh, H., and Tokura, Y.: Phys. Rev. Lett. 96 (2006) 167202.CrossRefGoogle Scholar
Arima, T.: J. Phys.: Condens.Matter 20 (2008) 434211 Google Scholar
Kaneko, K., Kakeya, I., Komori, S., and Fujita, S.: J. Appl. Phys. (submitted) Google Scholar
Ito, H., kaneko, K., and Fujita, S.: Jpn. J. Appl. Phys. 51 (2012) 100207 CrossRefGoogle Scholar
Shannon, R. D.: Acta Cryst. A32 (1976) 751 CrossRefGoogle Scholar
Kaneko, K., Nomura, T., Kakeya, I., and Fujita, S.: Appl. Phys. Express 2 (2009) 075501 CrossRefGoogle Scholar
Akaiwa, K. and Fujita, S.: Jpn. J. Appl. Phys. 51 (2012) 070203 Google Scholar
Nishinaka, H., Kawaharamura, T., and Fujita, S.: Jpn. J. Appl. Phys. 46 (2007) 6811 CrossRefGoogle Scholar
Kawaharamura, T., Nishinaka, H., and Fujita, S.: Jpn. J. Appl. Phys. 47 (2008) 4669 CrossRefGoogle Scholar
Kaneko, K., Kawanowa, H., Ito, H., and Fujita, S.: Jpn. J. Appl. Phys. 51 (2012) 020201 CrossRefGoogle Scholar
Dzyaloshinsky, I.: J. Phys. Chem. Solids 4 (1958) 241–255.CrossRefGoogle Scholar
Moriya, T.: Phys. Rev. Lett. 4 (1960) 228.CrossRefGoogle Scholar
Kawaharamura, T., Dang, G. T., and Furuta, M.: Jpn. J. Appl. Phys. 51 (2012) 040207 Google Scholar