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Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

Published online by Cambridge University Press:  10 February 2011

M. Levy ,
R.M. Osgood Jr ,
A. Kumar ,
H. Bakhru ,
R. Liu  and
E. Cross
M. Levy
Affiliation:
Department of Applied Physics, Columbia University, Street, New York, NY; 10027
R.M. Osgood Jr
Affiliation:
Department of Applied Physics, Columbia University, Street, New York, NY; 10027
A. Kumar
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY
H. Bakhru
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY
R. Liu
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
E. Cross
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

The epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 475
Copyright
Copyright © Materials Research Society 1998

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References

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