Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T06:33:38.557Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystal growth of photovoltaic polycrystalline Si1-xGex by die-casting growth

Published online by Cambridge University Press:  01 February 2011

H. Hirahara ,
T. Iida ,
Y. Sugiyama ,
T. Baba ,
Y. Takanashi  and
S. Sakuragi
H. Hirahara
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Sugiyama
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Baba
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Takanashi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
S. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
Get access

Abstract

Coin-shaped multicrystalline Si1-xGex crystals were grown using a Brigdman method combined with die-casting growth. Si1-xGex alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si1-xGex alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si1-xGex precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si1-xGex sample, Si1-xGex (x= 0.5 ± 3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.44
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kolodinski, S., Werner, J. H., Queisser, H.–J., Appl. Phys., A61, 535 (1995).Google Scholar
2. Marin, C., Ostrogorsky, A. G., J. Crystal Growth, 211, 378 (2000).Google Scholar
3. Abrosimov, N. V., Rossolenko, S. N., Thieme, W., Gerhardt, A., Schroder, W., J. Crystal Growth, 174, 182–186 (1997).Google Scholar
4. Dold, P., Barz, A., Recha, S., Pressel, K., Franz, M., Benz, K. W., J. Crystal Growth, 192, 125–135 (1998).Google Scholar
5. Yonenaga, , J. Crystal Growth, 198/199, 404–408 (1999).Google Scholar
6. Nakazima, K., Kusunoki, T., Azuma, Y., Usami, N., Fujiwara, K., Ujihara, T., Sazaki, G., shishido, T., J. Crystal Growth, 240, 373–381 (2002).Google Scholar
7. Nakazima, K., Kodama, S., Miyashita, S., Sazaki, G. and Hiyamizu, S., J. Crystal Growth, 205, 270–276 (1999).Google Scholar
8. Bliss, D., Demczyk, B., Anselmo, A., Bailey, J., J. Crystal Growth, 174, 187–193 (1997).Google Scholar
9. Sakuragi, S., Shimasaki, T., Sakuragi, G., Nanba, H., “Poly-silicon sheets for solar cells prepared by die-casting” To be published in the Proceedings of 19th European Photovoltaic Solar Energy Conference and Exhibition, France 7–11 June 2004 Google Scholar
10. Sakuragi, S., “Liquinert – A new concept for shaped crystal growth” To be published in the Proceedings of 19th European Photovoltaic Solar Energy Conference and Exhibition, France 7–11 June 2004 Google Scholar
11. Nayed-Hashemi, A.A. and Clark, J. B., “Binary Alloys Phase Diagrams”, 2000–2001 (1998)Google Scholar
12. Krishnamurthy, S., Sher, A., Phys. Review B 33, 1026–1035 (1986).Google Scholar