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Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy
Published online by Cambridge University Press: 01 February 2011
Abstract
InSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.
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- Copyright © Materials Research Society 2004
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