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Crystal Growth and Characterization of CdTe and Cd0.9Zn0.1Te for Nuclear Radiation Detectors

Published online by Cambridge University Press:  01 February 2011

Krishna Mandal ,
Sung H. Kang ,
Michael Choi ,
Alket Mertiri ,
Gary W Pabst  and
Caleb Noblitt
Krishna Mandal
Affiliation:
[email protected], EIC Laboratories, Inc., Advanced Materials, 111 Downey St, Norwood, MA, 02062, United States, 781-769-9450, 781-551-0283
Sung H. Kang
Affiliation:
[email protected], EIC Laboratories, Inc., Norwood, MA, 02062, United States
Michael Choi
Affiliation:
[email protected], EIC Laboratories, Inc., Norwood, MA, 02062, United State s
Alket Mertiri
Affiliation:
[email protected], EIC Laboratories, Inc., Norwood, MA, 02062, United States
Gary W Pabst
Affiliation:
[email protected], EIC Laboratories, Inc., Norwood, MA, 02062, United States
Caleb Noblitt
Affiliation:
[email protected], EIC Laboratories, Inc., Norwood, MA, 02062, United States
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Abstract

CdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively at EIC Laboratories, Inc. for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from in-house zone refined ultra pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled and optimized by a computer simulation and modeling program (MASTRAPP). The grown crystals were thoroughly characterized after sequential surface passivations and post-growth annealing treatments with and without component overpressures. The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ∼10 μm for CdTe crystal and ∼8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm−2 for CdTe and ≤ 3×104 cm−2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ∼1.5×1010 Ω·cm for CdTe and 2-5×1011 Ω·cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe=2×10−3 cm2/V (μτh=8×10−5 cm2/V) and μτ3-6×10−3 cm2/V (μτh=4-6×10−5 cm2/V) for CdTe and CZT, respectively. Final assessments of the detector performance have been carried out using 241Am (60 keV) and 137Cs (662 keV) energy sources and the results are presented in this paper.

Keywords

semiconductingII-VIcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1038: Symposium O – Nuclear Radiation Detection Materials , 2007 , 1038-O04-02
Copyright
Copyright © Materials Research Society 2008

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