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Cross-Sectional Transmission Electron Microscopy of Defects in Beta Silicon Carbide Thin Films

Published online by Cambridge University Press:  28 February 2011

C.H. Carter Jr ,
J.A. Edmond ,
J.W. Palmour ,
J. Ryu ,
H.J. Kim  and
R.F. Davis
C.H. Carter Jr
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
J.A. Edmond
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
J.W. Palmour
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
J. Ryu
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
H.J. Kim
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
R.F. Davis
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Techniques have been developed at NCSU for fabricating cross-sectional transmission electron microscopy (XTEM) foils from monocrystalline beta silicon carbide thin films grown by chemical vapor deposition. The results of the TEM observations are utilized to discern the efficacy of the various processing parameters in terms of film quality and defect structure as well as oxidation, ion implantation and annealing procedures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 593
Copyright
Copyright © Materials Research Society 1985

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References

1. Liaw, H.P. and Davis, R.F., J. Electrochem. Soc. 132, 642 (1985).Google Scholar
2. Liaw, H.P. and Davis, R.F., J. Electrochem. Soc. 131, 3014 (1984).Google Scholar