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Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

Published online by Cambridge University Press:  26 February 2011

A. Lahav ,
M. Eizenberg  and
Y. Komem
A. Lahav
Affiliation:
Department of Materials Engineering, Technion, Haifa, 32000, Israel
M. Eizenberg
Affiliation:
Department of Materials Engineering, Technion, Haifa, 32000, Israel
Y. Komem
Affiliation:
Department of Materials Engineering, Technion, Haifa, 32000, Israel
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Abstract

The reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 355
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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