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Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

Published online by Cambridge University Press:  01 February 2011

Songqing Wen ,
James Bentley ,
Jae-il Jang  and
G. M. Pharr
Songqing Wen
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996
James Bentley
Affiliation:
Oak Ridge National Libratory, Metals & Ceramics Division, Oak Ridge TN 37831
Jae-il Jang
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996
G. M. Pharr
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996 Oak Ridge National Libratory, Metals & Ceramics Division, Oak Ridge TN 37831
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Abstract

Nanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T6.4/R10.4
Copyright
Copyright © Materials Research Society 2005

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References

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