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Cross-Sectional Scanning Tunneling Microscopy of III-V Quantum Structures

Published online by Cambridge University Press:  21 February 2011

M.B. Johnson ,
M. Pfister ,
S.F. Alvarado  and
H.W.M. Salemink
M.B. Johnson
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
M. Pfister
Affiliation:
Also at: Institut de Micro- et Optoélectronique, EPFL, CH-1015 Lausanne, Switzerland
S.F. Alvarado
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
H.W.M. Salemink
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
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Abstract

In this paper, we report on the use of cross-sectional scanning tunneling microscopy (XSTM) to analyze several aspects of MBE-grown III-V quantum structures on an atomic scale. In particular, we discuss our recent work to identify various atomic species within the same chemical group (e.g. Al and Ga within the group Ill sublattice of AlGaAs) thereby allowing the determination of atomic roughness at GaAs/A1GaAs interfaces and alloy clustering in AlGaAs. We demonstrate and discuss the sensitivity of the STM to individual dopants in the near surface layers, as well as to the local carrier concentration. Lastly, we use XSTM to obtain images of cross-sectioned GaAs/AIGaAs quantum well wires with atomic detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 599
Copyright
Copyright © Materials Research Society 1994

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References

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