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Cross-sectional cathodoluminescence of GaN epitaxial films

Published online by Cambridge University Press:  10 February 2011

M. Herrera Zaldivar ,
P. Fernández  and
J. Piqueras
M. Herrera Zaldivar
Affiliation:
Permanent address: instituto de Física, B. Universidad Autónoma de Puebla, 72570 Puebla. México.
P. Fernández
Affiliation:
Permanent address: instituto de Física, B. Universidad Autónoma de Puebla, 72570 Puebla. México.
J. Piqueras
Affiliation:
Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, 28040 Madrid, Spain.
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Abstract

Cathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample cross-section as well as monochromatic CL images show strong spatial variations of the different luminescence emissions along the growth axis. At the buffer layer-substrate interface and at the top part of the sample, which corresponds to a Si doped epilayer, enhanced CL emission is observed as compared with the relatively low emission in the central region of the cross-section. The nature of the defects responsible for the observed CL distribution is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 703
Copyright
Copyright © Materials Research Society 1998

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