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Cross-Plane Thermoelectric Properties in Si/Ge Superlattices

Published online by Cambridge University Press:  21 March 2011

Bao Yang ,
Jian L. Liu ,
Kang L. Wang  and
Gang Chen
Bao Yang
Affiliation:
Mechanical and Aerospace Engineering Department, Massachusetts Institute of Technology, Cambridge, MA 02139
Jian L. Liu
Affiliation:
Electrical Engineering Department, University of California, Los Angeles, CA 90095
Kang L. Wang
Affiliation:
Electrical Engineering Department, University of California, Los Angeles, CA 90095
Gang Chen
Affiliation:
Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

In this paper, a set of methods is developed to measure the Seebeck coefficient, electrical conductivity, and thermal conductivity in the cross-plane direction of thin films. The method employs microfabricated heaters, voltage and temperature sensors, and phase-lock amplifiers to determine the temperature and Seebeck voltage oscillation in the cross-plane direction of the samples, from which the thermal conductivity and Seebeck coefficient of thin films are determined simultaneously. The cross-plane electrical conductivity is also measured by a modified transmission line model. These methods are applied to Si/Ge superlattices grown by molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G3.2
Copyright
Copyright © Materials Research Society 2002

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References

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