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Cr/Ni/Au ohmic contacts to the moderately doped p- and n-GaN

Published online by Cambridge University Press:  10 February 2011

Taek Kim ,
Myung C. Yoo  and
Taeil Kim
Taek Kim
Affiliation:
Photonics Semiconductor Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, [email protected]
Myung C. Yoo
Affiliation:
Photonics Semiconductor Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, [email protected]
Taeil Kim
Affiliation:
Photonics Semiconductor Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, [email protected]
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Abstract

We report new Cr/Ni/Au and Ni/Cr/Au tri-layer metallization schemes for achieving low resistance ohmic contacts to moderately doped p- (∼1 × 1017/cm3), and n-GaN (∼1 × 1018/cm3) respectively. The metallizations were thermally evaporated on 2 μm-thick GaN layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). Comparisons with bi-layer metallizations such as Ni/Au and Cr/Au were also made. The Cr/Ni/Au contacts showed a low specific contact resistivity of 9.1 × 10−5 Ω⋅cm2 to n-GaN while that of Ni/Cr/Au to p-GaN was 8.3 × 10−2 Ω⋅cm2. The Ni/Cr/Au contacts also showed a low specific contact resistivity of 2.6 × 10−4 Ω⋅cm2 to n-GaN. The Ni/Cr/Au metallization could made reasonable ohmic contacts to p- and n-GaN simultaneously

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1061
Copyright
Copyright © Materials Research Society 1997

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References

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