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Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Quantum Wells Grown by Atmospheric Pressure OMCVD

Published online by Cambridge University Press:  28 February 2011

Daniel C. Bertolet ,
Jung-Kuei Hsu ,
Kei May Lau  and
Emil S. Koteles
Daniel C. Bertolet
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Jung-Kuei Hsu
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Kei May Lau
Affiliation:
University of Massachusetts, Dept. of Electrical & Computer Engr., Amherst, MA 01003
Emil S. Koteles
Affiliation:
GTE Laboratories, Inc. 40 Sylvan Rd., Waltham, MA 02254
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Abstract

A critical layer thickness study of strained GaAs/InGaAs and AlGaAs/GaAsP quantum wells (QWs) grown by atmospheric pressure organometallic chemical vapor deposition (OMCVD) is reported. Characterization by conventional photoluminescence (PL), photoluminescence excitation (PLE) spectroscopy, optical microscopy, and x-ray diffraction suggests that partial or regional relaxation begins to occur at critical thicknesses predicted by the force-balance model. To test the stability of strained quantum wells with well width near or exceeding the predicted critical thickness, annealing up to 850°C for ten minutes was carried out. No sign of degradation or complete relaxation of the QW layers was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 141
Copyright
Copyright © Materials Research Society 1990

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References

1van der Merwe, J.H., J. Appl. Phys., 34, 123 (1963).Google Scholar
2Mathews, J.W. and Blakeslee, A.E., J. Crystal Growth, 27, 118 (1974) .Google Scholar
3People, R. and Bean, J.C., Appl. Phys. Lett., 47, 32 (1985).Google Scholar
4Gourley, P.L., Fritz, I.J., and Dawson, L.R., Appl. Phys. Lett., 52, 377 (1988).Google Scholar
5Orders, P.J. and Usher, B.F., Appl. Phys. Lett., 50, 980 (1987) .Google Scholar
6Lievin, J.-L. and Fonstad, C.G., Appl. Phys. Lett., 51, 1173 (1987) .Google Scholar
7Elman, B., Koteles, E.S., Melman, P., Jagannath, C., Lee, J., and Dugger, D., Appl. Phys. Lett., 55, 1659 (1989).Google Scholar
8Bertolet, D.C., Hsu, J.-K., Jones, S.H., and Lau, K.M., Appl. Phys. Lett., 52, 293 (1988).Google Scholar
9Bertolet, D.C., Hsu, J.-K., and Lau, K.M., Appl. Phys. Lett., 53,2501 (1988) .Google Scholar
10Koteles, E.S., Owens, D.A., Bertolet, D.C., and Lau, K.M., Phys. Rev., 38, 10139 (1988).Google Scholar
11Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., and Hills, C.R., IEEE Electron. Dev. Lett., EDL–9, 621 (1988).Google Scholar