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Critical Technologies for Poly-Si TFT in High Resolution AM-LCD

Published online by Cambridge University Press:  10 February 2011

I-Wei Wu
I-Wei Wu*
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, 195–4, Sec. 4, Chung Hsing Rd, Chutung, Hsinchu, Taiwan 310, R.O.C.
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Abstract

Polycrystalline silicon (p-Si) TFT offers higher aperture ratio with integrated driver circuits compared to the conventional a-Si TFT in AM-LCD application. The advantages of the p-Si TFT as the pixel switching element will be more pronounced for AM-LCDs with large number of scan lines and/or high pixel density. This paper reviews challenges and issues associated with the technology of p-Si TFT, particularly in active silicon layer deposition, solid phase and laser crystallization, hydrogenation, leakage current, performance of different device architectures and reliability. Critical issues affecting the p-Si TFT AMLCD pixel design are analyzed, including: lithographic resolution and overlay accuracy, pixel density and aspect ratio, display format, storage to LC capacitance ratio, and gate dielectric thickness. Predictions on the regimes of dominance for different flat-panel technologies by advantages in performance and-or cost with respect to panel size and pixel density will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 125
Copyright
Copyright © Materials Research Society 1997

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