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A Critical Comparison of the Techniques used to Characterize the Crystallography of an Interface: Pd on mbe “Rown GaAs(100)

Published online by Cambridge University Press:  26 February 2011

I. P. Delrue ,
M. Wittmer ,
T. S. Kuan  and
R. Ludeke
I. P. Delrue
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY,10598
M. Wittmer
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY,10598
T. S. Kuan
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY,10598
R. Ludeke
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218 Yorktown Heights, NY,10598
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Abstract

In situ Reflection High Energy Electron Diffraction and ex-situ Transmission Electron Diffraction and Ion Channeling have been applied to a reacted Pd-GaAs interface and the results obtained are critically compared. The investigation has been done on the stabilized c(2×8) surface obtained by MBE on GaAs(100) substrates. Smooth surface epitaxial growth has been observed by RHEED as soon as a few monolayers of Pd are deposited at a substrate temperature of about 325°C. TEM diffraction studies indicate the presence of an intermetallic hexagonal structure similar to the orthorhombic Pd5Ga2 but with slightly different lattice parameters due to the possible incorporation of As. A less abundant phase was also identified as an hexagonal structure similar to Pd8As2. Ion Channeling indicates pronounced reduction in scattering yield when the [100] axis of the substrate was aligned with the impinging beam, thus supporting the RHEED analysis. The three techniques listed above were found to be useful for the determination of the epitaxial relationship between the identified phases and the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 455
Copyright
Copyright © Materials Research Society 1985

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