Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:34:26.904Z Has data issue: false hasContentIssue false
  • English
  • Français

Creep Resistant Solders for Packaging in Optical Communication Devices

Published online by Cambridge University Press:  10 February 2011

S. Jin  and
H. Mavoori
S. Jin
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
H. Mavoori
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
Get access

Extract

Very fine oxide dispersoids have been incorporated into solder alloys to create a new, improved solder structure with an ultrafine grain size of ˜200 -500 nm and significantly enhanced mechanical properties. The microstructure is seen to be quite stable upon high temperature exposure (e.g.. 120°C), which is attributed to the presence of very fine dispersoid particles which impede grain boundary sliding and dislocation movement. As much as three orders of magnitude reduction in the steady state creep rate has been achieved. The new solders also exhibit improved (4–5 times higher) tensile strength at low strain rates and improved ductility under high strain rate deformation. It is demonstrated that with a dispersion of TiO2 particles, the Pb-Sn eutectic solder with a low melting point of 183°C can be made more creep-resistant than the 80Au-2OSn eutectic solder with a much higher melting point of 278°C. The new creep-resistant solders can be useful for optical or optoelectronic packaging in which the dimensional stability of the assembled structure is essential.

Keywords

SolderCreep resistanceOptoelectronic packaging
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 531: Symposium DD – Reliabilty of Photonics Materials & Structures , 1998 , 83
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lifschitz, I. M. and Slezov, V. V., Soviet Physics JETP 35, p. 331 (1959).Google Scholar
2. Marshall, J. L., Calderon, J., Sees, J., Lucey, G., and Hwang, J. S., IEEE Trans. Comp., Hybrids, Manuf. Technol. 14, p. 698 (1991).10.1109/33.105119Google Scholar
3. Wasynczuk, J. A. and Lucey, G. K., in Proc. NEPCON West, Anaheim, CA, Feb. 23–27, 1992, Des Plains, Illinois, Cahners Exhibition Group, pp. 1245–1255.Google Scholar
4. Clough, R. B., Patel, R., Hwang, J. S., and Lucey, G., pp. 1256–1265.Google Scholar
5. Bertrabet, H. S. and McGee, S.,pp. 1276–1277.Google Scholar
6. McCormack, M., Jin, S., and Kammlott, G. W., IEEE Trans. Comp., Hybrids, Manuf. Technol. 17, p. 452 (1994).Google Scholar
7. Jin, S. and McCormack, M., J. Elect. Mater. 23, p. 735 (1994).10.1007/BF02651367Google Scholar
8. Frear, D.R., JOM, June 1994, p.40.10.1007/BF03220717Google Scholar
9. Boudreau, R. A., JOM, June 1994, p.41.10.1007/BF03220718Google Scholar
10. Lee, Y. C. and Basavanhally, N., JOM, June 1994, p. 46.10.1007/BF03220719Google Scholar
11. Frear, D.R., Grivas, D., Morris, J.W. Jr., J. Electron. Mater. 17 (2), 171 (1988).10.1007/BF02652148Google Scholar